Stability, Reliability, and Robustness of GaN Power Devices: A Review

Modelling Reliability in GaN HEMT Devices

In this paper a study of the evolution over time of four different magnitudes in GaN HEMT’s will be presented. The experimental data measured at III-V Lab’s, as a result of a Life Test performed using as test vehicles six different GaN HEMT devices, allow the authors to find a way of modelling reliability by using specific mathematical functions developed to simulate the temporal dependence of ...

Reliability studies of vertical GaN devices based on bulk GaN substrates

GaN reliability – a white

Physical analysis of power AlGaN/GaN HEMT reliability

This paper deals with the physical study of the Schottky contact after pulsed-RF saturated life test under enhanced drain bias voltage on power HEMTs. Electrical measurements showed a pinch-off voltage (VP) shift, a decrease of output power and average drain current while Photon Emission Microscopy (PEM) was used to identify the degradation distribution along the 80 fingers die. Finally, Transm...

Commercialization of High 600V GaN-on-Silicon Power Devices

With power conversion losses endemic in all areas of electricity consumption, broadly categorized into motion control (accounting for around 50% of total electrical energy use), lighting, air conditioning, and information technology, consumers, governments and utilities are finding ways to achieve higher efficiency. Manufacturers of data servers, telecom systems, solar power inverters and drive...